Wire bonding with the KS 4523
C.S. Allen 31.01.2013
A good wedge is crucial
Make sure sample height is correct:
- Remove sample from under wedge.
- Set loop to zero.
- Press chessman for 1st bond.
- Adjust sample height so wedge just touches lowest bond pad.
- Raise bonding arm.
- Second bond in air.
- Reset loop to normal value.
"Safe" parameters for bonding on heavily doped Si with 300 nm SiO2.
- 1st bond on sample:
- P = 1.6, T = 4, F = 1
- 2nd bond on PCB:
- P = 3.0, T = 3, F = 2
With small metal thickness (<300nm) will need to bond half to bond pad half to SiO2.